LH5116: Difference between revisions
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[[File:LH5116NA-10.jpg|thumb|SHARP LH5116NA-10 SRAM IC. Picture by [[User:ArcadeTV|ArcadeTV]]]] | [[File:LH5116NA-10.jpg|thumb|SHARP LH5116NA-10 SRAM IC. Picture by [[User:ArcadeTV|ArcadeTV]]]] | ||
The LH5116/H are static RAMs organized as 2,048 | The LH5116/H are static RAMs organized as 2,048 x 8bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE). | ||
== FEATURES == | == FEATURES == | ||
Latest revision as of 13:14, 11 November 2019
The LH5116/H are static RAMs organized as 2,048 x 8bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE).
FEATURES
- 2,048 x 8 bit organization
- Access time: 100 ns (MAX.)
- Power consumption:
Operating: 220 mW (MAX.)
Standby: 5.5 mW (MAX.)
- Single +5 V power supply
- Fully-static operation
- TTL compatible I/O
- Three-state outputs
- Wide temperature range available
LH5116H: -40 to +85°C
- Packages:
24-pin, 600-mil DIP
24-pin, 300-mil SK-DIP
24-pin, 450-mil SOP